SI1070 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 1.2A SC89-6
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | SC-89 (SOT-563F) | 1.2 A | 236 mW | 8.3 nC | 12 V | 1.55 V | 385 pF | 30 V | Surface Mount | SOT-563 SOT-666 | N-Channel | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2.5 V 4.5 V | 99 mOhm |