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PMV213SN,215

Discrete Semiconductor Products

PMV213SN,215

NRND

Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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DocumentsPMV213SN,215 | Datasheet Power MOSFET single-shot and repetitive avalanche ruggedness rating +15

PMV213SN,215

Discrete Semiconductor Products

PMV213SN,215

NRND

Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

Deep-Dive with AI

DocumentsPMV213SN,215 | Datasheet Power MOSFET single-shot and repetitive avalanche ruggedness rating +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMV213SN,215

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	280 mW
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	223067	$ 1.08

Description

General part information

PMV213SN Series

N-channel TrenchMOS standard level FET

Documents

Technical documentation and resources

PMV213SN,215 | Datasheet

Power MOSFET single-shot and repetitive avalanche ruggedness rating

Application note

Questions about package outline drawings

Application note

RC Thermal Models

Application note

LFPAK MOSFET thermal design guide, Chinese version

Application note

LFPAK MOSFET thermal design guide - Part 2

Application note

plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

Marcom graphics

plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

Package information

Nexperia package poster

Power MOSFET frequently asked questions and answers

Understanding power MOSFET data sheet parameters

Application note

Failure signature of Electrical Overstress on Power MOSFETs

Application note

Using power MOSFETs in parallel

Application note

Wave soldering profile

Reel pack for SMD, 7"; Q3/T4 product orientation

Packing information

Understanding power MOSFET data sheet parameters

Application note

Reflow soldering profile

Reflow soldering

PMV213SN Series

N-channel TrenchMOS standard level FET

Part	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology
Nexperia USA Inc. PMV213SN,215	280 mW	Surface Mount	TO-236AB	330 pF	1.9 A	30 V	250 mOhm	N-Channel	7 nC	SC-59 SOT-23-3 TO-236-3	150 °C	-55 °C	10 V	100 V	MOSFET (Metal Oxide)