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N-channel TrenchMOS standard level FET
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N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET
| Part | Power Dissipation (Max) | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 280 mW | Surface Mount | TO-236AB | 330 pF | 1.9 A | 30 V | 250 mOhm | N-Channel | 7 nC | SC-59 SOT-23-3 TO-236-3 | 150 °C | -55 °C | 10 V | 100 V | MOSFET (Metal Oxide) |