Discrete Semiconductor Products

NTLJS2103PTBG

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POWER MOSFET, P CHANNEL, 12 V, 5.9 A, 0.025 OHM, WDFN, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 12 V, 5.9 A, 0.025 OHM, WDFN, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTLJS2103PTBG

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1157 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	700 mW
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	800 mV

Single P-Channel µCool™ Power MOSFET -12V -7.7A 40mΩ

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor NTLJS2103PTAG	800 mV	6-WDFN (2x2)	15 nC	MOSFET (Metal Oxide)	700 mW	Surface Mount	3.5 A	1.2 V 4.5 V	8 V	-55 °C	150 °C	P-Channel	1157 pF	12 V
ON Semiconductor NTLJS2103PTBG	800 mV	6-WDFN (2x2)	15 nC	MOSFET (Metal Oxide)	700 mW	Surface Mount	3.5 A	1.2 V 4.5 V	8 V	-55 °C	150 °C	P-Channel	1157 pF	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

-12 V, -7.7 A, µCool™ Single P-Channel, 2x2 mm, WDFN Package

Technical documentation and resources