Integrated Circuits (ICs)

IR2112-2

Obsolete

INFINEON

IC GATE DRVR HI/LOW SIDE 16DIP

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Integrated Circuits (ICs)

IR2112-2

Obsolete

INFINEON

IC GATE DRVR HI/LOW SIDE 16DIP

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2112-2

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	250 mA
Current - Peak Output (Source, Sink) [custom]	500 mA
Driven Configuration	High-Side or Low-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	9.5 V, 6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-DIP (0.300", 7.62mm), 14 Leads
Rise / Fall Time (Typ) [custom]	40 ns
Rise / Fall Time (Typ) [custom]	80 ns
Supplier Device Package	16-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2112 Series

Part	Gate Type	Supplier Device Package	Input Type	Package / Case	Package / Case	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Package / Case
INFINEON IR2112STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112S	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112SPBF
INFINEON IR2112SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	Non-Inverting	14-DIP	7.62 mm	0.3 in	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole
INFINEON IR2112-2PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-PDIP	Non-Inverting	16-DIP (0.300" 7.62mm) 14 Leads			40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole
INFINEON IR2112PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	Non-Inverting	14-DIP	7.62 mm	0.3 in	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole
INFINEON IR2112STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112-1	IGBT MOSFET (N-Channel) N-Channel MOSFET		Non-Inverting	13 Leads 14-DIP		7.62 mm	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole	0.3 in
INFINEON IR2112-2	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-PDIP	Non-Inverting	16-DIP (0.300" 7.62mm) 14 Leads			40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.92

Description

General part information

IR2112 Series

High-Side or Low-Side Gate Driver IC Non-Inverting 16-PDIP

Documents

Technical documentation and resources