IR2112 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HI/LOW SIDE 16SOIC

Part	Gate Type	Supplier Device Package	Input Type	Package / Case	Package / Case	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Package / Case
INFINEON IR2112STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112S	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112SPBF
INFINEON IR2112SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	Non-Inverting	14-DIP	7.62 mm	0.3 in	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole
INFINEON IR2112-2PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-PDIP	Non-Inverting	16-DIP (0.300" 7.62mm) 14 Leads			40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole
INFINEON IR2112PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	Non-Inverting	14-DIP	7.62 mm	0.3 in	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole
INFINEON IR2112STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	Non-Inverting	16-SOIC	7.5 mm	0.295 "	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Surface Mount
INFINEON IR2112-1	IGBT MOSFET (N-Channel) N-Channel MOSFET		Non-Inverting	13 Leads 14-DIP		7.62 mm	40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole	0.3 in
INFINEON IR2112-2	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-PDIP	Non-Inverting	16-DIP (0.300" 7.62mm) 14 Leads			40 ns	80 ns	250 mA	500 mA	6 V 9.5 V	600 V	High-Side or Low-Side	Independent	-40 °C	150 °C	2	20 V	10 VDC	Through Hole