Discrete Semiconductor Products

EPC2204A

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TRANS GAN 80V .006OHM AECQ101

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Discrete Semiconductor Products

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TRANS GAN 80V .006OHM AECQ101

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2204A

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	851 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Grade	Vgs(th) (Max) @ Id	Qualification	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
EPC EPC2204A	Die	6 mOhm	N-Channel	Die	7.4 nC	GaNFET (Gallium Nitride)	851 pF	80 V	Surface Mount	Automotive	2.5 V	AEC-Q101	6 V	-4 V	29 A	5 V	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 29A (Ta) Surface Mount Die

Technical documentation and resources