
Discrete Semiconductor Products
JANTXV1N4153-1
ActiveMicrochip Technology
DIODE GEN PURP 50V 150MA DO35
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Discrete Semiconductor Products
JANTXV1N4153-1
ActiveMicrochip Technology
DIODE GEN PURP 50V 150MA DO35
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV1N4153-1 |
|---|---|
| Capacitance @ Vr, F | 2 pF |
| Current - Average Rectified (Io) | 150 mA |
| Current - Reverse Leakage @ Vr | 50 nA |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, DO-35, DO-204AH |
| Qualification | MIL-PRF-19500/337 |
| Reverse Recovery Time (trr) | 4 ns |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 880 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
JANTX1N4153-1-Switching-Diode Series
Missing
Documents
Technical documentation and resources
No documents available