Discrete Semiconductor Products
BSM300D12P3E005
ObsoleteRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 300 A, 1.2 KV, MODULE
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Discrete Semiconductor Products
BSM300D12P3E005
ObsoleteRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 300 A, 1.2 KV, MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM300D12P3E005 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 14000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 1260 W |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSM300D12P3E005 Series
BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
Documents
Technical documentation and resources