BSM300D12P3E005 Series

1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
Rohm Semiconductor BSM300D12P3E005	-40 °C	150 °C	300 A	Module	2 N-Channel	1260 W	1.2 kV	1200 V	Silicon Carbide (SiC)	5.6 V	Module	14000 pF	Chassis Mount

1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.