Discrete Semiconductor Products

SISS80DN-T1-GE3

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MOSFET N-CH 20V 58.3A/210A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 20V 58.3A/210A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS80DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	58.3 A, 210 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	65 W, 5 W
Rds On (Max) @ Id, Vgs	0.92 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Package / Case	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SISS80DN-T1-GE3	PowerPAK® 1212-8S	1.5 V	-55 °C	150 °C	122 nC	6450 pF	5 W 65 W	MOSFET (Metal Oxide)	58.3 A 210 A	N-Channel	Surface Mount	10 V	2.5 V	0.92 mOhm	12 V	-8 V	PowerPAK® 1212-8S	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 58.3A (Ta), 210A (Tc) 5W (Ta), 65W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources