SISS80 Series

Catalog

MOSFET N-CH 20V 58.3A/210A PPAK

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Package / Case	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SISS80DN-T1-GE3	PowerPAK® 1212-8S	1.5 V	-55 °C	150 °C	122 nC	6450 pF	5 W 65 W	MOSFET (Metal Oxide)	58.3 A 210 A	N-Channel	Surface Mount	10 V	2.5 V	0.92 mOhm	12 V	-8 V	PowerPAK® 1212-8S	20 V