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TO-220F
Discrete Semiconductor Products

FDPF5N50NZF

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP> II, FRFET<SUP>®</SUP>, 500 V, 4.2 A, 1.75 Ω, TO-220F

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG+1
TO-220F
Discrete Semiconductor Products

FDPF5N50NZF

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP> II, FRFET<SUP>®</SUP>, 500 V, 4.2 A, 1.75 Ω, TO-220F

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFDPF5N50NZF
Current - Continuous Drain (Id) @ 25°C4.2 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds485 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs1.75 Ohm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

FDPF5N50NZF Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup>, Ultra FRFET<sup>TM</sup> MOSFET 500 V, 4 A, 2 Ω, TO-220F

PartSupplier Device PackageTechnologyMounting TypeVgs (Max)Rds On (Max) @ Id, VgsPackage / CaseCurrent - Continuous Drain (Id) @ 25°CFET TypeVgs(th) (Max) @ IdOperating Temperature [Min]Operating Temperature [Max]Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs [Max]Drain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max) [Max]Rds On (Max) @ Id, Vgs [Max]
TO-220F
ON Semiconductor
FDPF5N50NZF
TO-220F-3
MOSFET (Metal Oxide)
Through Hole
25 V
1.75 Ohm
TO-220-3 Full Pack
4.2 A
N-Channel
5 V
-55 °C
150 °C
485 pF
12 nC
500 V
10 V
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FDPF5N50UT
TO-220F-3
MOSFET (Metal Oxide)
Through Hole
30 V
2 Ohm
TO-220-3 Full Pack
4 A
N-Channel
5 V
-55 °C
150 °C
650 pF
500 V
10 V
28 W
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FDPF5N50NZ
TO-220F-3
MOSFET (Metal Oxide)
Through Hole
25 V
TO-220-3 Full Pack
4.5 A
N-Channel
5 V
-55 °C
150 °C
440 pF
12 nC
500 V
10 V
1.5 Ohm
TO-220F
ON Semiconductor
FDPF52N20T
TO-220F-3
MOSFET (Metal Oxide)
Through Hole
30 V
TO-220-3 Full Pack
52 A
N-Channel
5 V
-55 °C
150 °C
2900 pF
63 nC
200 V
10 V
38.5 W
49 mOhm
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FDPF5N50NZ
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FDPF5N50UT
TO-220F-3
MOSFET (Metal Oxide)
Through Hole
30 V
2 Ohm
TO-220-3 Full Pack
4 A
N-Channel
5 V
-55 °C
150 °C
650 pF
500 V
10 V
28 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach 1$ 1.04

Description

General part information

FDPF5N50NZF Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET®MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.