FDPF5N50NZF Series

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F

Catalog

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F

Part	Supplier Device Package	Technology	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDPF5N50NZF	TO-220F-3	MOSFET (Metal Oxide)	Through Hole	25 V	1.75 Ohm	TO-220-3 Full Pack	4.2 A	N-Channel	5 V	-55 °C	150 °C	485 pF	12 nC	500 V	10 V
ON Semiconductor FDPF5N50UT	TO-220F-3	MOSFET (Metal Oxide)	Through Hole	30 V	2 Ohm	TO-220-3 Full Pack	4 A	N-Channel	5 V	-55 °C	150 °C	650 pF		500 V	10 V	28 W
ON Semiconductor FDPF5N50NZ	TO-220F-3	MOSFET (Metal Oxide)	Through Hole	25 V		TO-220-3 Full Pack	4.5 A	N-Channel	5 V	-55 °C	150 °C	440 pF	12 nC	500 V	10 V		1.5 Ohm
ON Semiconductor FDPF52N20T	TO-220F-3	MOSFET (Metal Oxide)	Through Hole	30 V		TO-220-3 Full Pack	52 A	N-Channel	5 V	-55 °C	150 °C	2900 pF	63 nC	200 V	10 V	38.5 W	49 mOhm
ON Semiconductor FDPF5N50NZ
ON Semiconductor FDPF5N50UT	TO-220F-3	MOSFET (Metal Oxide)	Through Hole	30 V	2 Ohm	TO-220-3 Full Pack	4 A	N-Channel	5 V	-55 °C	150 °C	650 pF		500 V	10 V	28 W

Catalog

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F

Key Features

• RDS(on)= 1.38Ω ( Typ.)@ VGS= 10V, ID= 2.25A

• Low gate charge ( Typ. 9nC)

• Low Crss( Typ. 4pF)

• 100% avalanche tested

• Improved dv/dt capability

• ESD improved capability

• RoHS compliant

Description

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET®MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.