Discrete Semiconductor Products

STS3P6F6

Obsolete

MOSFET P-CH 60V 3A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	STS3P6F6

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max) [Max]	2.7 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STS3P6F6	340 pF	P-Channel	8-SOIC	MOSFET (Metal Oxide)	150 °C	-55 °C	20 V	60 V	2.7 W	6.4 nC	Surface Mount	4 V	160 mOhm	3 A	0.154 in	8-SOIC	3.9 mm	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.39

General part information

P-Channel 60 V 3A (Tj) 2.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources