Discrete Semiconductor Products

SI4168DY-T1-GE3

Active

MOSFET N-CH 30V 24A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 24A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4168DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	1720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI4168DY-T1-GE3	30 V	8-SOIC	5.7 mOhm	Surface Mount	24 A	8-SOIC	3.9 mm	0.154 in	3 V	MOSFET (Metal Oxide)	2.5 W 5.7 W	-55 °C	150 °C	1720 pF	N-Channel	44 nC	4.5 V 10 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources