SI4168 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 24A 8SO
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 8-SOIC | 5.7 mOhm | Surface Mount | 24 A | 8-SOIC | 3.9 mm | 0.154 in | 3 V | MOSFET (Metal Oxide) | 2.5 W 5.7 W | -55 °C | 150 °C | 1720 pF | N-Channel | 44 nC | 4.5 V 10 V | 20 V |