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Microchip Technology-JANTXV2N5415 GP BJT Trans GP BJT PNP 200V 1A 750mW 3-Pin TO-5 Bag
Discrete Semiconductor Products

2N3868

Active
Microchip Technology

TRANS GP BJT PNP 60V 0.003A 1000MW 3-PIN TO-5 BAG

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Microchip Technology-JANTXV2N5415 GP BJT Trans GP BJT PNP 200V 1A 750mW 3-Pin TO-5 Bag
Discrete Semiconductor Products

2N3868

Active
Microchip Technology

TRANS GP BJT PNP 60V 0.003A 1000MW 3-PIN TO-5 BAG

Technical Specifications

Parameters and characteristics for this part

Specification2N3868
Current - Collector (Ic) (Max)3 mA
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Mounting TypeThrough Hole
Power - Max [Max]1 W
Supplier Device PackageTO-5
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 20.76
Microchip DirectN/A 1$ 22.36
NewarkEach 100$ 20.76
500$ 19.96

Description

General part information

JANTXV2N3868S-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. The device package outlines are as follows: TO- 5, TO-39 and U4 (SMD .22) suffix for all encapsulated device types. For unencapsulated devices.