Discrete Semiconductor Products

SIS478DN-T1-GE3

Obsolete

MOSFET N-CH 30V 12A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 12A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS478DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	398 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	15.6 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIS478DN-T1-GE3	N-Channel	10.5 nC	15.6 W	4.5 V 10 V	25 V	MOSFET (Metal Oxide)	2.5 V	30 V	20 mOhm	PowerPAK® 1212-8	PowerPAK® 1212-8	12 A	Surface Mount	398 pF	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources