SIS478 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 12A PPAK1212-8
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 10.5 nC | 15.6 W | 4.5 V 10 V | 25 V | MOSFET (Metal Oxide) | 2.5 V | 30 V | 20 mOhm | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 12 A | Surface Mount | 398 pF | -55 °C | 150 °C |