STW88N65M5
ActiveN-CHANNEL 650 V, 0.024 OHM TYP., 84 A MDMESH M5 POWER MOSFET IN TO-247 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
STW88N65M5
ActiveN-CHANNEL 650 V, 0.024 OHM TYP., 84 A MDMESH M5 POWER MOSFET IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STW88N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 84 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8825 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 450 W |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW88 Series
These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.Worldwide best RDS(on)in TO-247Higher VDSSratingHigher dv/dt capabilityExcellent switching performanceEasy to drive100% avalanche tested
Documents
Technical documentation and resources