Discrete Semiconductor Products

SI4114DY-T1-GE3

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MOSFET N-CH 20V 20A 8SO

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 20A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4114DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	3700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.1 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI4114DY-T1-GE3	95 nC	N-Channel	2.5 W 5.7 W	8-SOIC	Surface Mount	MOSFET (Metal Oxide)	20 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	20 V	16 V	6 mOhm	3700 pF	2.1 V	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SI4114DY-T1-E3	95 nC	N-Channel	2.5 W 5.7 W	8-SOIC	Surface Mount	MOSFET (Metal Oxide)	20 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	20 V	16 V	6 mOhm	3700 pF	2.1 V	4.5 V 10 V

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General part information

N-Channel 20 V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources