SI4114 Series

Catalog

MOSFET N-CH 20V 20A 8SO

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI4114DY-T1-GE3	95 nC	N-Channel	2.5 W 5.7 W	8-SOIC	Surface Mount	MOSFET (Metal Oxide)	20 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	20 V	16 V	6 mOhm	3700 pF	2.1 V	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SI4114DY-T1-E3	95 nC	N-Channel	2.5 W 5.7 W	8-SOIC	Surface Mount	MOSFET (Metal Oxide)	20 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	20 V	16 V	6 mOhm	3700 pF	2.1 V	4.5 V 10 V