Discrete Semiconductor Products

UF3C065040B3

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MOSFET N-CH 650V 41A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 650V 41A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	UF3C065040B3

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	176 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-263 (D2PAK)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	6 V

Part	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Qorvo UF3C065040B3	TO-263 (D2PAK)	25 V	1500 pF	176 W	52 mOhm	12 V	41 A	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	Surface Mount	N-Channel	51 nC	6 V
Qorvo UF3C065040K3S	TO-247-3	25 V	1500 pF	326 W	52 mOhm	12 V	54 A	650 V	TO-247-3	175 °C	-55 °C	Through Hole	N-Channel	51 nC	6 V
Qorvo UF3C065040T3S	TO-220-3	25 V	1500 pF	326 W	52 mOhm	12 V	54 A	650 V	TO-220-3	175 °C	-55 °C	Through Hole	N-Channel	51 nC	6 V

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General part information

N-Channel 650 V 41A (Tc) 176W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available