
CSD22202W15
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 12.2 MOHM, GATE ESD PROTECTION
Deep-Dive with AI
Search across all available documentation for this part.

CSD22202W15
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 12.2 MOHM, GATE ESD PROTECTION
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD22202W15 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DSBGA, 9-UFBGA |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs [Max] | 12.2 mOhm |
| Supplier Device Package | 9-DSBGA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.70 | |
| 10 | $ 0.61 | |||
| 100 | $ 0.42 | |||
| 500 | $ 0.35 | |||
| 1000 | $ 0.30 | |||
| Digi-Reel® | 1 | $ 0.70 | ||
| 10 | $ 0.61 | |||
| 100 | $ 0.42 | |||
| 500 | $ 0.35 | |||
| 1000 | $ 0.30 | |||
| Tape & Reel (TR) | 3000 | $ 0.24 | ||
| 6000 | $ 0.23 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.41 | |
| 100 | $ 0.28 | |||
| 250 | $ 0.21 | |||
| 1000 | $ 0.14 | |||
Description
General part information
CSD22202W15 Series
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Documents
Technical documentation and resources