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YZF-9-BGA Pkg
Discrete Semiconductor Products

CSD22202W15

Active
Texas Instruments

-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 12.2 MOHM, GATE ESD PROTECTION

YZF-9-BGA Pkg
Discrete Semiconductor Products

CSD22202W15

Active
Texas Instruments

-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 12.2 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD22202W15
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)8 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds1390 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 9-UFBGA
Power Dissipation (Max)1.5 W
Rds On (Max) @ Id, Vgs [Max]12.2 mOhm
Supplier Device Package9-DSBGA
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-6 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.70
10$ 0.61
100$ 0.42
500$ 0.35
1000$ 0.30
Digi-Reel® 1$ 0.70
10$ 0.61
100$ 0.42
500$ 0.35
1000$ 0.30
Tape & Reel (TR) 3000$ 0.24
6000$ 0.23
Texas InstrumentsLARGE T&R 1$ 0.41
100$ 0.28
250$ 0.21
1000$ 0.14

Description

General part information

CSD22202W15 Series

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.