Discrete Semiconductor Products

IRLZ14STRRPBF

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 10A D2PAK

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Discrete Semiconductor Products

IRLZ14STRRPBF

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 10A D2PAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRLZ14STRRPBF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	43 W, 3.7 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

IRLZ14 Series

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology
Vishay General Semiconductor - Diodes Division IRLZ14STRRPBF	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14PBF	2 V	43 W	TO-220-3	400 pF	200 mOhm	8.4 nC	Through Hole	N-Channel	-55 °C	175 ░C	TO-220AB	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14STRR	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14L	2 V	3.7 W 43 W	I2PAK TO-262-3 Long Leads TO-262AA	400 pF	200 mOhm	8.4 nC	Through Hole	N-Channel	-55 °C	175 ░C	TO-262-3	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14S	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14SPBF	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	800	$ 0.84
		1600	$ 0.69
		2400	$ 0.65
		5600	$ 0.62

Description

General part information

IRLZ14 Series

N-Channel 60 V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources