IRLZ14 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 60V 10A D2PAK

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology
Vishay General Semiconductor - Diodes Division IRLZ14STRRPBF	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14PBF	2 V	43 W	TO-220-3	400 pF	200 mOhm	8.4 nC	Through Hole	N-Channel	-55 °C	175 ░C	TO-220AB	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14STRR	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14L	2 V	3.7 W 43 W	I2PAK TO-262-3 Long Leads TO-262AA	400 pF	200 mOhm	8.4 nC	Through Hole	N-Channel	-55 °C	175 ░C	TO-262-3	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14S	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRLZ14SPBF	2 V	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	200 mOhm	8.4 nC	Surface Mount	N-Channel	-55 °C	175 ░C	TO-263 (D2PAK)	4 V 5 V	10 V	60 V	10 A	MOSFET (Metal Oxide)