Discrete Semiconductor Products

1N5407G A0G

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DIODE GEN PURP 800V 3A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5407G A0G

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Speed [Min]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Qualification
Taiwan Semiconductor Corporation 1N5407G A0G	200 mA 500 ns	-55 °C	150 °C	Through Hole	DO-201AD	DO-201AD Axial	5 µA	1 V	3 A	Standard	25 pF	800 V
Taiwan Semiconductor Corporation 1N5407GH	200 mA 500 ns	-55 °C	150 °C	Through Hole	DO-201AD	DO-201AD Axial	5 µA	1 V	3 A	Standard	25 pF	800 V	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 3A Through Hole DO-201AD

Technical documentation and resources