1N5407 Series

Catalog

DIODE GEN PURP 800V 3A DO201AD

Part	Speed [Min]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Qualification
Taiwan Semiconductor Corporation 1N5407G A0G	200 mA 500 ns	-55 °C	150 °C	Through Hole	DO-201AD	DO-201AD Axial	5 µA	1 V	3 A	Standard	25 pF	800 V
Taiwan Semiconductor Corporation 1N5407GH	200 mA 500 ns	-55 °C	150 °C	Through Hole	DO-201AD	DO-201AD Axial	5 µA	1 V	3 A	Standard	25 pF	800 V	Automotive	AEC-Q101