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TO-247-3
Discrete Semiconductor Products

AFGY160T65SPD-B4

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ON Semiconductor

FS3 TO247 160A 650V AUTOMOTIVE TRACTION WITH BINNING/ TUBE ROHS COMPLIANT: YES

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TO-247-3
Discrete Semiconductor Products

AFGY160T65SPD-B4

Active
ON Semiconductor

FS3 TO247 160A 650V AUTOMOTIVE TRACTION WITH BINNING/ TUBE ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAFGY160T65SPD-B4
Current - Collector (Ic) (Max) [Max]240 A
Current - Collector Pulsed (Icm)480 A
Gate Charge245 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]882 W
QualificationAEC-Q100
Reverse Recovery Time (trr)132 ns
Supplier Device PackageTO-247-3
Switching Energy12.4 mJ, 5.7 mJ
Td (on/off) @ 25°C53 ns, 98 ns
Test Condition400 V, 160 A, 15 V, 5 Ohm
Vce(on) (Max) @ Vge, Ic2.05 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 14.37
30$ 11.63
120$ 10.95
510$ 9.92
1020$ 9.10
NewarkEach 25$ 12.74
50$ 11.52
100$ 10.91
250$ 9.49
500$ 9.22
ON SemiconductorN/A 1$ 7.79

Description

General part information

AFGY160T65SPD-B4 Series

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

Documents

Technical documentation and resources