AFGY160T65SPD-B4 Series

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

Catalog

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

Part	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Grade	Reverse Recovery Time (trr)	Supplier Device Package	Td (on/off) @ 25°C	Gate Charge	Qualification	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Pulsed (Icm)	IGBT Type	Mounting Type	Test Condition
ON Semiconductor AFGY160T65SPD-B4	5.7 mJ 12.4 mJ	-55 °C	175 ░C	650 V	Automotive	132 ns	TO-247-3	53 ns 98 ns	245 nC	AEC-Q100	240 A	882 W	2.05 V	TO-247-3	480 A	Trench Field Stop	Through Hole	5 Ohm 15 V 160 A 400 V

Catalog

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

Key Features

• AEC-Q101 Qualified and PPAP Capable

• Vcesat and Vth binning

• Positive Temperature Co-Efficient

• 100% of the Parts are Dynamically Tested

• Short circuit ruggedness > 6us @ 25°C

• This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

• Copacked with Soft, Fast Recovery Extremefast Diode

Description

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.