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ONSEMI FDMA410NZ
Discrete Semiconductor Products

FDMA410NZ

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 1.5 V SPECIFIED, 20V, 9.5A, 23MΩ

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ONSEMI FDMA410NZ
Discrete Semiconductor Products

FDMA410NZ

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 1.5 V SPECIFIED, 20V, 9.5A, 23MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA410NZ
Current - Continuous Drain (Id) @ 25°C9.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14 nC
Input Capacitance (Ciss) (Max) @ Vds1080 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.45
10$ 0.92
100$ 0.61
500$ 0.48
1000$ 0.44
Digi-Reel® 1$ 1.45
10$ 0.92
100$ 0.61
500$ 0.48
1000$ 0.44
Tape & Reel (TR) 3000$ 0.38
6000$ 0.36
9000$ 0.35
NewarkEach (Supplied on Full Reel) 3000$ 0.47
6000$ 0.43
12000$ 0.41
18000$ 0.38
30000$ 0.36
ON SemiconductorN/A 1$ 0.32

Description

General part information

FDMA410NZ Series

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON)@ VGS= 1.5 V on special MicroFET leadframe.