STGW40H65DFB-4
LTBTRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT
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STGW40H65DFB-4
LTBTRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGW40H65DFB-4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 210 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power - Max [Max] | 283 W |
| Reverse Recovery Time (trr) | 62 ns |
| Supplier Device Package | TO-247-4 |
| Switching Energy | 200 µJ, 410 µJ |
| Td (on/off) @ 25°C [custom] | 142 ns |
| Td (on/off) @ 25°C [custom] | 40 ns |
| Test Condition | 40 A, 5 Ohm, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW40H65DFB-4 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources