Specification	TPS1120D

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.17 A
Drain to Source Voltage (Vdss)	15 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	5.45 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	840 mW
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

TPS1120 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs
Texas Instruments TPS1120D	5.45 nC	-40 °C	150 °C	Logic Level Gate	840 mW	8-SOIC	1.17 A	15 V	2 P-Channel (Dual)	1.5 V	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	180 mOhm
Texas Instruments TPS1120DR	5.45 nC	-40 °C	150 °C	Logic Level Gate	840 mW	8-SOIC	1.17 A	15 V	2 P-Channel (Dual)	1.5 V	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	180 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.46
		1274	$ 1.46
	Tube	1	$ 2.40
		75	$ 1.93
		150	$ 1.59
		525	$ 1.34
		1050	$ 1.14
		2025	$ 1.08
		5025	$ 1.04
Texas Instruments	TUBE	1	$ 2.10
		100	$ 1.73
		250	$ 1.24
		1000	$ 0.94

Description

General part information

TPS1120 Series

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTMprocess, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

Documents

Technical documentation and resources

Dual P-Channel Enhancement-Mode MOSFETs datasheet (Rev. A)

Data sheet