TPS1120 Series

Catalog

DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs
Texas Instruments TPS1120D	5.45 nC	-40 °C	150 °C	Logic Level Gate	840 mW	8-SOIC	1.17 A	15 V	2 P-Channel (Dual)	1.5 V	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	180 mOhm
Texas Instruments TPS1120DR	5.45 nC	-40 °C	150 °C	Logic Level Gate	840 mW	8-SOIC	1.17 A	15 V	2 P-Channel (Dual)	1.5 V	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	180 mOhm