BUL1102EFP
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 4 A, 30 W, TO-220FP, THROUGH HOLE
BUL1102EFP
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 4 A, 30 W, TO-220FP, THROUGH HOLE
Technical Specifications
Parameters and characteristics for this part
| Specification | BUL1102EFP |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 12 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 30 W |
| Supplier Device Package | TO-220FP |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 450 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BUL1102E Series
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Documents
Technical documentation and resources
