TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

VN4012L-G

Active

Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 12 OHM

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Understanding MOSFET Data +1

Discrete Semiconductor Products

VN4012L-G

Active

Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 12 OHM

Deep-Dive with AI

DocumentsDatasheet Understanding MOSFET Data +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	VN4012L-G

Current - Continuous Drain (Id) @ 25°C	160 mA
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

VN4012 Series

MOSFET, N-Channel Enhancement-Mode, 400V, 12 Ohm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology VN4012L-G	-55 °C	150 °C	400 V	TO-226-3 TO-92-3	MOSFET (Metal Oxide)	12 Ohm	160 mA	1 W	N-Channel	20 V	TO-92-3	4.5 V	Through Hole	110 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bag	1	$ 2.00
		25	$ 1.66
		100	$ 1.51
Microchip Direct	BAG	1	$ 2.00
		25	$ 1.66
		100	$ 1.51
		1000	$ 1.26
		5000	$ 1.15
		10000	$ 1.09

Description

General part information

VN4012 Series

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Documents

Technical documentation and resources

Datasheet

Understanding MOSFET Data

Application Notes

DMOS Devices for Telecommunications

Application Notes