Discrete Semiconductor Products

SQ2315ES-T1_BE3

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MOSFET P-CH 12V 5A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 12V 5A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2315ES-T1_BE3

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SQ2315ES-T1_BE3	SOT-23-3 (TO-236)	870 pF	AEC-Q101	12 V	MOSFET (Metal Oxide)	P-Channel	13 nC	Automotive	SC-59 SOT-23-3 TO-236-3	50 mOhm	8 V	2 W	1 V	-55 °C	175 ░C	5 A	Surface Mount	1.8 V 4.5 V
Vishay General Semiconductor - Diodes Division SQ2315ES-T1_GE3	SOT-23-3 (TO-236)	870 pF	AEC-Q101	12 V	MOSFET (Metal Oxide)	P-Channel	13 nC	Automotive	SC-59 SOT-23-3 TO-236-3	50 mOhm	8 V	2 W	1 V	-55 °C	150 °C	5 A	Surface Mount	1.8 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 5A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources