SQ2315 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 5A SOT23-3
| Part | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Drain to Source Voltage (Vdss) | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs | Grade | Package / Case | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | SOT-23-3 (TO-236) | 870 pF | AEC-Q101 | 12 V | MOSFET (Metal Oxide) | P-Channel | 13 nC | Automotive | SC-59 SOT-23-3 TO-236-3 | 50 mOhm | 8 V | 2 W | 1 V | -55 °C | 175 ░C | 5 A | Surface Mount | 1.8 V 4.5 V |
Vishay General Semiconductor - Diodes Division | SOT-23-3 (TO-236) | 870 pF | AEC-Q101 | 12 V | MOSFET (Metal Oxide) | P-Channel | 13 nC | Automotive | SC-59 SOT-23-3 TO-236-3 | 50 mOhm | 8 V | 2 W | 1 V | -55 °C | 150 °C | 5 A | Surface Mount | 1.8 V 4.5 V |