Discrete Semiconductor Products
R6509ENJTL
ActiveRohm Semiconductor
650V 9A TO-263, LOW-NOISE POWER MOSFET
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Discrete Semiconductor Products
R6509ENJTL
ActiveRohm Semiconductor
650V 9A TO-263, LOW-NOISE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6509ENJTL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 94 W |
| Rds On (Max) @ Id, Vgs [Max] | 585 mOhm |
| Supplier Device Package | LPTS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6509ENJ Series
R6509ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources