Catalog
650V 9A TO-263, Low-noise Power MOSFET
Description
AI
R6509ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 9A TO-263, Low-noise Power MOSFET
650V 9A TO-263, Low-noise Power MOSFET
| Part | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 430 pF | 94 W | 4 V | MOSFET (Metal Oxide) | LPTS | 10 V | 24 nC | 9 A | 150 °C | N-Channel | Surface Mount | 585 mOhm | 20 V |