Discrete Semiconductor Products

STP3NK90ZFP

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STMicroelectronics

N-CHANNEL 900 V, 4.1 OHM TYP., 3 A SUPERMESH POWER MOSFET IN TO-220FP PACKAGE

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DocumentsDatasheet Product Change Notice EN +15

Discrete Semiconductor Products

STP3NK90ZFP

Active

STMicroelectronics

N-CHANNEL 900 V, 4.1 OHM TYP., 3 A SUPERMESH POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP3NK90ZFP

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.7 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP3NK90 Series

N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STP3NK90ZFP	900 V	25 W	22.7 nC	TO-220FP	4.8 Ohm	3 A	TO-220-3 Full Pack	MOSFET (Metal Oxide)	N-Channel	Through Hole	4.5 V	150 °C	-55 °C	30 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	226	$ 1.08
	Tube	1	$ 1.26
		50	$ 0.86
		100	$ 0.81
		500	$ 0.67
		1000	$ 0.62
		2000	$ 0.57
		5000	$ 0.52
		10000	$ 0.51
Newark	Each	1	$ 0.95
		10	$ 0.91
		100	$ 0.87
		500	$ 0.81
		1000	$ 0.73
		2500	$ 0.71
		10000	$ 0.71

Description

General part information

STP3NK90 Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.