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Discrete Semiconductor Products

JANTXV1N6627

Unknown
Microchip Technology

DIODE GEN PURP 440V 1.75A AXIAL

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Search across all available documentation for this part.

Documents1N6626-1N6631
Discrete Semiconductor Products

JANTXV1N6627

Unknown
Microchip Technology

DIODE GEN PURP 440V 1.75A AXIAL

Deep-Dive with AI

Documents1N6626-1N6631

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N6627
Capacitance @ Vr, F40 pF
Current - Average Rectified (Io)1.75 A
Current - Reverse Leakage @ Vr2 µA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseE, Axial
QualificationMIL-PRF-19500/590
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]440 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 500$ 15.55
Microchip DirectN/A 1$ 16.74

Description

General part information

JANTXV1N6627-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources