FCPF125N65S3
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 24 A, 125 MΩ, TO-220F
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FCPF125N65S3
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 24 A, 125 MΩ, TO-220F
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Technical Specifications
Parameters and characteristics for this part
| Specification | FCPF125N65S3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 44 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1790 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 38 W |
| Rds On (Max) @ Id, Vgs | 125 mOhm |
| Supplier Device Package | TO-220F |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.81 | |
| 50 | $ 3.81 | |||
| 100 | $ 3.27 | |||
| 500 | $ 2.90 | |||
| 1000 | $ 2.49 | |||
| 2000 | $ 2.34 | |||
| Newark | Each | 1 | $ 6.32 | |
| 10 | $ 5.30 | |||
| 25 | $ 4.72 | |||
| 50 | $ 4.14 | |||
| 100 | $ 3.92 | |||
| 250 | $ 3.79 | |||
| 500 | $ 3.67 | |||
| ON Semiconductor | N/A | 1 | $ 2.07 | |
Description
General part information
FCPF125N65S3 Series
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Documents
Technical documentation and resources