FCPF125N65S3 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id
ON Semiconductor FCPF125N65S3	44 nC	-55 °C	150 °C	650 V	TO-220F	24 A	1790 pF	38 W	30 V	125 mOhm	MOSFET (Metal Oxide)	Through Hole	N-Channel	10 V	TO-220-3 Full Pack	4.5 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220F

Key Features

• 700 V @ TJ = 150oC

• Ultra Low Gate Charge (Typ. Qg = 44 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF)

• Optimized Capacitance

• Internal Gate Resistance: 4 ohm

• Typ. RDS(on)= 105 mΩ

• 100% Avalanche Tested

• RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.