Discrete Semiconductor Products

STP3NB100

Obsolete

MOSFET N-CH 1000V 3A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 1000V 3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP3NB100

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Package / Case	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP3NB100	Through Hole	6 Ohm	MOSFET (Metal Oxide)	1000 V	3 A	4 V	100 W	TO-220	TO-220-3	N-Channel	30 V	10 V	150 °C	30 nC	700 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.99

General part information

N-Channel 1000 V 3A (Tc) 100W (Tc) Through Hole TO-220

Technical documentation and resources