Discrete Semiconductor Products

SI4914BDY-T1-GE3

Obsolete

MOSFET 2N-CH 30V 8.4A/8A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 8.4A/8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4914BDY-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	8 A, 8.4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	10.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	2.7 W, 3.1 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.7 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI4914BDY-T1-GE3	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Half Bridge)	8 A 8.4 A	2.7 V	30 V	21 mOhm	8-SOIC	-55 °C	150 °C	Surface Mount	2.7 W 3.1 W	MOSFET (Metal Oxide)	10.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 8.4A, 8A 2.7W, 3.1W Surface Mount 8-SOIC

Technical documentation and resources