SI4914 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8.4A/8A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power - Max | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Half Bridge) | 8 A 8.4 A | 2.7 V | 30 V | 21 mOhm | 8-SOIC | -55 °C | 150 °C | Surface Mount | 2.7 W 3.1 W | MOSFET (Metal Oxide) | 10.5 nC |