Discrete Semiconductor Products

MCMN2012A-TP

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N-CHANNEL MOSFET

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	MCMN2012A-TP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	DFN2020-6JA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Micro Commercial Components MCMN2012A-TP	1.8 V 4.5 V	20 V	32 nC	1 V	12 A	1800 pF	15 mOhm	N-Channel	DFN2020-6JA	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	10 V
Micro Commercial Components MCMN2012-TP	1.2 V 4.5 V	20 V	32 nC	1 V	12 A	1800 pF	11 mOhm	N-Channel	DFN2020-6J	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	10 V

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General part information

N-Channel 20 V 12A Surface Mount DFN2020-6JA

Technical documentation and resources