Discrete Semiconductor Products

SIHFR9120-GE3

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MOSFET P-CH 100V 5.6A DPAK

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Discrete Semiconductor Products

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MOSFET P-CH 100V 5.6A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFR9120-GE3

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHFR9120-GE3	10 V	2.5 W 42 W	100 V	4 V	18 nC	TO-252AA	-55 °C	150 °C	Surface Mount	390 pF	5.6 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	600 mOhm	20 V

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General part information

P-Channel 100 V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

Technical documentation and resources